Researchers at the Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, have achieved the world's lowest write power for a specific type of memory storage device. Not only ...
Forbes contributors publish independent expert analyses and insights. This is my third and last blog on digital storage and memory projections for 2024. The last two articles focused on digital ...
The FPS Review on MSN
Industry-wide price hikes expected in 2026 as manufacturers begin implementing price adjustments due to memory and storage supply shortages
It looks as if 2026 will be a very interesting year when it comes to seeing how manufacturers of electronic devices cope with rising memory costs. While a recent report detailed 171% YoY contract ...
This is the second in a set of three blogs about projections for digital storage and memory for the following year that we have been doing for a while. Our first blog focused on the latest ...
Scientists have confirmed the existence of altermagnetism, a third fundamental form of magnetism that could revolutionize ...
The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
Organic transistor memory devices integrate organic semiconducting materials with field‐effect transistor architectures to achieve nonvolatile data storage. These devices harness charge trapping ...
Does anyone remember phone numbers anymore? Or have all these little bits of information you used to memorize moved onto digital devices such as smartphones? Some have argued this outsourcing of our ...
This article is part of Gizmodo Deals, produced separately from the editorial team. We may earn a commission when you buy through links on the site. Smartphones, laptops, and tablets are more and more ...
An advance in the use of antiferromagnetic materials in memory storage devices has been made by an international team of physicists. An advance in the use of antiferromagnetic materials in memory ...
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